PART |
Description |
Maker |
M67760LC 67760LC |
RF POWER MODULE 806-870MHz, 12.5V, 20W, FM MOBILE RADIO From old datasheet system
|
Mitsubishi Electric Corporation
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RA20H8087M-E01 RA20H8087M-01 RA20H8087M |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO 806-825/ 851-870MHz 20W 12.5V 3 Stage Amp. For MOBILE RADIO 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO 806-825 / 851 - 870MHz 202.5V阶段制造。对于移动通信
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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MICRF610 MICRF610Z MICRF6100608 MICRF610ZTR |
868-870MHz ISM Band Transceiver Module IC RF MOD 868-870MHZ 11.5X14.1MM SPECIALTY TELECOM CIRCUIT, QMA16
|
Micrel Semiconductor, Inc. MICREL INC
|
D8740240GT |
GaAs Power Doubler, 40 - 870MHz, 24.0dB min. Gain @ 870MHz, 375mA max. @ 24VDC
|
http:// PDI[PREMIER DEVICES, INC.]
|
D8740220GTH |
GaAs Power Doubler, 40 - 870MHz, 22.0dB min. Gain @ 870MHz, 440mA max. @ 24VDC
|
http:// PREMIER DEVICES, INC.
|
D8740150GT |
GaAs Power Doubler, 40 - 870MHz, 15.5dB min. Gain @ 870MHz, 375mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
D8740250GTH |
GaAs Power Doubler, 40 - 870MHz, 25.0dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
|
http:// PREMIER DEVICES, INC.
|
D8740320GTH |
GaAs Power Doubler, 40 - 870MHz, 32.0dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
S8740340 |
GaAs Push Pull, 40 - 870MHz, 34.5dB min. Gain @ 870MHz, 280mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
MHW803 |
2 W / 806 to 905 MHz UHF POWER AMPLIFIERS 2 W, 806 to 905 MHz UHF POWER AMPLIFIERS
|
Motorola, Inc
|
SKY65146 |
3.5 V Broadband MCM Power Amplifier 806-849 MHz
|
Skyworks Solutions Inc.
|
PTVA042502FCV1R0 PTVA042502EC |
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ?806 MHz Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ?806 MHz
|
Infineon Technologies A...
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